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Title: Percolation conductivity in hafnium sub-oxides

In this study, we demonstrated experimentally that formation of chains and islands of oxygen vacancies in hafnium sub-oxides (HfO{sub x}, x < 2) leads to percolation charge transport in such dielectrics. Basing on the model of Éfros-Shklovskii percolation theory, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. Based on the percolation theory suggested model shows that hafnium sub-oxides consist of mixtures of metallic Hf nanoscale clusters of 1–2 nm distributed onto non-stoichiometric HfO{sub x}. It was shown that reported approach might describe low resistance state current-voltage characteristics of resistive memory elements based on HfO{sub x}.
Authors:
;  [1] ;  [2] ;  [3] ;  [4]
  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090 (Russian Federation)
  2. (Russian Federation)
  3. Department of Mechatronic Technology, National Taiwan Normal University, Taipei 106, Taiwan (China)
  4. National Chiao Tung University, Hsinchu 300, Taiwan (China)
Publication Date:
OSTI Identifier:
22395618
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE TRANSPORT; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; HAFNIUM OXIDES; MIXTURES; NANOSTRUCTURES; OXYGEN; STOICHIOMETRY; VACANCIES