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Title: The influence of carbon doping on the performance of Gd{sub 2}O{sub 3} as high-k gate dielectric

One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd{sub 2}O{sub 3} layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures.
Authors:
; ; ;  [1] ; ;  [2] ;  [3]
  1. Department of Materials Science and Engineering, Technion–Israel Institute of Technology, Haifa 32000 (Israel)
  2. Institute of Electronic Materials and Devices, Leibniz University of Hannover, Schneiderberg 32, 30167 Hannover (Germany)
  3. Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai (India)
Publication Date:
OSTI Identifier:
22395617
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; CARBON; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; GADOLINIUM OXIDES; INTERFACES; LAYERS; LEAKAGE CURRENT; PERFORMANCE; PERMITTIVITY; RARE EARTHS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS