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Title: Characterization of reactively sputtered c-axis aligned nanocrystalline InGaZnO{sub 4}

Crystallinity and texturing of RF sputtered c-axis aligned crystal InGaZnO{sub 4} (CAAC IGZO) thin films were quantified using X-ray diffraction techniques. Above 190 °C, nanocrystalline films with an X-ray peak at 2θ = 30° (009 planes) developed with increasing c-axis normal texturing up to 310 °C. Under optimal conditions (310 °C, 10% O{sub 2}), films exhibited a c-axis texture full-width half-maximum of 20°. Cross-sectional high-resolution transmission electron microscopy confirmed these results, showing alignment variation of ±9° over a 15 × 15 nm field of view and indicating formation of much larger aligned domains than previously reported. At higher deposition temperatures, c-axis alignment was gradually lost as polycrystalline films developed.
Authors:
; ; ;  [1] ;  [2] ;  [2] ;  [3] ;  [4]
  1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
  2. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)
  3. (United States)
  4. Corning Incorporated, Corning, New York 14831 (United States)
Publication Date:
OSTI Identifier:
22395610
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL STRUCTURE; DEPOSITION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; POLYCRYSTALS; RESOLUTION; SPUTTERING; TEMPERATURE DEPENDENCE; TEXTURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VARIATIONS; X-RAY DIFFRACTION; ZINC OXIDES