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Title: Observation of mid-infrared intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells

Mid-infrared (4.20–4.84 μm) intersubband absorption in non-polar m-plane Al{sub 0.5}Ga{sub 0.5}N/GaN multiple-quantum wells is observed at room temperature. 10 period Al{sub 0.5}Ga{sub 0.5}N/GaN multiple-quantum wells were grown on free-standing m-plane GaN substrates by metalorganic chemical vapor deposition (MOCVD), and the high-quality structural and optical properties are revealed by x-ray diffraction and photoluminescence studies. Through this we have demonstrated that MOCVD grown non-polar m-plane AlGaN/GaN quantum wells are a promising material for mid-infrared intersubband devices.
Authors:
 [1] ;  [2] ;  [2] ;  [1] ;  [1] ;  [2]
  1. Institute for Nano Quantum Information Electronics, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22395603
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; ALUMINIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WELLS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION