Investigation of optical transitions in InAs/GaAs(Sb)/AlAsSb quantum dots using modulation spectroscopy
- University of California at Los Angeles, Los Angeles, California 90095 (United States)
InAs quantum dots (QDs) were grown in an AlAs{sub 0.56}Sb{sub 0.44}/GaAs matrix in the unintentionally doped (uid) region of an In{sub 0.52}Al{sub 0.48}As solar cell, establishing a variety of optical transitions both into and out of the QDs. The ultimate goal is to demonstrate sequential absorption, where one photon is absorbed, promoting an electron from the valence band into the QD, and a second photon is absorbed in order to promote the trapped electron from a QD state into the host conduction band. In this study, we directly investigate the optical properties of the solar cell using photoreflectance and evaluate the possibility of sequential absorption by measuring spectral responsivity with broadband infrared illumination.
- OSTI ID:
- 22395595
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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