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Title: Experimental investigation of radiative thermal rectifier using vanadium dioxide

Vanadium dioxide (VO{sub 2}) exhibits a phase-change behavior from the insulating state to the metallic state around 340‚ÄČK. By using this effect, we experimentally demonstrate a radiative thermal rectifier in the far-field regime with a thin film VO{sub 2} deposited on the silicon wafer. A rectification contrast ratio as large as two is accurately obtained by utilizing a one-dimensional steady-state heat flux measurement system. We develop a theoretical model of the thermal rectifier with optical responses of the materials retrieved from the measured mid-infrared reflection spectra, which is cross-checked with experimentally measured heat flux. Furthermore, we tune the operating temperatures by doping the VO{sub 2} film with tungsten (W). These results open up prospects in the fields of thermal management and thermal information processing.
Authors:
 [1] ;  [2] ; ;  [1] ;  [3]
  1. Toyota Central Research and Development Labs, Nagakute, Aichi 480-1192 (Japan)
  2. (RCAST), The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8904 (Japan)
  3. Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8904 (Japan)
Publication Date:
OSTI Identifier:
22395593
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; HEAT FLUX; INFRARED SPECTRA; ONE-DIMENSIONAL CALCULATIONS; PHASE TRANSFORMATIONS; RECTIFIERS; REFLECTION; SILICON; STEADY-STATE CONDITIONS; TEMPERATURE DEPENDENCE; THIN FILMS; TUNGSTEN; VANADIUM OXIDES