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Title: Increased InAs quantum dot size and density using bismuth as a surfactant

We have investigated the growth of self-assembled InAs quantum dots using bismuth as a surfactant to control the dot size and density. We find that the bismuth surfactant increases the quantum dot density, size, and uniformity, enabling the extension of the emission wavelength with increasing InAs deposition without a concomitant reduction in dot density. We show that these effects are due to bismuth acting as a reactive surfactant to kinetically suppress the surface adatom mobility. This mechanism for controlling quantum dot density and size has the potential to extend the operating wavelength and enhance the performance of various optoelectronic devices.
Authors:
; ; ; ; ; ;  [1] ; ;  [2]
  1. Microelectronics Research Center, The University of Texas at Austin, Texas 78758 (United States)
  2. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
Publication Date:
OSTI Identifier:
22395588
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; BISMUTH; DENSITY; DEPOSITION; INDIUM ARSENIDES; MOBILITY; OPTOELECTRONIC DEVICES; PERFORMANCE; POTENTIALS; QUANTUM DOTS; SURFACES; SURFACTANTS; WAVELENGTHS