Electric field modulation of thermovoltage in single-layer MoS{sub 2}

Journal Article · Mon Dec 22 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4905014· OSTI ID:22395587

Dobusch, Lukas; Furchi, Marco M.; Pospischil, Andreas; Mueller, Thomas ^[1]; Bertagnolli, Emmerich; Lugstein, Alois ^[2]

---

1. Institute of Photonics, TU-Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria)
2. Institute of Solid State Electronics, TU-Wien, Floragasse 7, A-1040 Vienna (Austria)

We study electric field modulation of the thermovoltage in single-layer MoS{sub 2}. The Seebeck coefficient generally increases for a diminishing free carrier concentration, and in the case of single-layer MoS{sub 2} reaches considerable large values of about S = −5160 μV/K at a resistivity of 490 Ω m. Further, we observe time dependent degradation of the conductivity in single layer MoS{sub 2}, resulting in variations of the Seebeck coefficient. The degradation is attributable to adsorbates from ambient air, acting as p-dopants and additional Coulomb potentials, resulting in carrier scattering increase, and thus decrease of the electron mobility. The corresponding power factors remain at moderate levels, due to the low conductivity of single layer MoS{sub 2}. However, as single-layer MoS{sub 2} has a short intrinsic phonon mean free path, resulting in low thermal conductivity, MoS{sub 2} holds great promise as high-performance 2D thermoelectric material.

• OSTI ID: 22395587
• Journal Information: Applied Physics Letters, Vol. 105, Issue 25; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE CARRIERS
CONCENTRATION RATIO
COULOMB FIELD
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRON MOBILITY
MEAN FREE PATH
MODULATION
MOLYBDENUM SULFIDES
PHONONS
POWER FACTOR
SCATTERING
THERMAL CONDUCTIVITY
THERMOELECTRIC MATERIALS
TIME DEPENDENCE