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Title: Electric field modulation of thermovoltage in single-layer MoS{sub 2}

We study electric field modulation of the thermovoltage in single-layer MoS{sub 2}. The Seebeck coefficient generally increases for a diminishing free carrier concentration, and in the case of single-layer MoS{sub 2} reaches considerable large values of about S = −5160 μV/K at a resistivity of 490 Ω m. Further, we observe time dependent degradation of the conductivity in single layer MoS{sub 2}, resulting in variations of the Seebeck coefficient. The degradation is attributable to adsorbates from ambient air, acting as p-dopants and additional Coulomb potentials, resulting in carrier scattering increase, and thus decrease of the electron mobility. The corresponding power factors remain at moderate levels, due to the low conductivity of single layer MoS{sub 2}. However, as single-layer MoS{sub 2} has a short intrinsic phonon mean free path, resulting in low thermal conductivity, MoS{sub 2} holds great promise as high-performance 2D thermoelectric material.
Authors:
; ; ;  [1] ; ;  [2]
  1. Institute of Photonics, TU-Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria)
  2. Institute of Solid State Electronics, TU-Wien, Floragasse 7, A-1040 Vienna (Austria)
Publication Date:
OSTI Identifier:
22395587
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 25; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; CONCENTRATION RATIO; COULOMB FIELD; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; MEAN FREE PATH; MODULATION; MOLYBDENUM SULFIDES; PHONONS; POWER FACTOR; SCATTERING; THERMAL CONDUCTIVITY; THERMOELECTRIC MATERIALS; TIME DEPENDENCE