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Title: Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at the CdTe/Mg{sub 0.24}Cd{sub 0.76}Te heterointerface are estimated to be around 0.5 μs and (4.7 ± 0.4) × 10{sup 2 }cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179 ns is observed in the DH with a 2 μm thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.
Authors:
;  [1] ;  [2] ; ; ; ;  [1] ;  [2]
  1. Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22395580
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM TELLURIDES; CARRIER LIFETIME; CHARGE CARRIERS; EMISSION SPECTRA; HALL EFFECT; HETEROJUNCTIONS; INDIUM ANTIMONIDES; INTERFACES; LAYERS; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PHOTONS; RECOMBINATION; SUBSTRATES; TIME RESOLUTION