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Title: Erratum: “High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment” [Appl. Phys. Lett. 100, 202106 (2012)]

No abstract prepared.
Authors:
;  [1] ; ;  [2]
  1. Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)
  2. Imaging and Characterization Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)
Publication Date:
OSTI Identifier:
22395573
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATHEMATICAL SOLUTIONS; PERFORMANCE; PLASMA; THIN FILMS; TRANSISTORS; ZINC OXIDES