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Title: Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO{sub 2} nanogranular films

Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO{sub 2} nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ∼8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics.
Authors:
; ;  [1]
  1. Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)
Publication Date:
OSTI Identifier:
22395562
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COUPLING; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; GAIN; INDIUM COMPOUNDS; INTERFACES; INVERTERS; NANOSTRUCTURES; RESISTORS; SILICA; SILICON OXIDES; THIN FILMS; TRANSISTORS; ZINC OXIDES