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Title: Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic

Complementary logic based on tunnel field-effect transistors (TFETs) would drastically reduce power consumption thanks to the TFET's potential to obtain a sub-60 mV/dec subthreshold swing (SS). However, p-type TFETs typically do not meet the performance of n-TFETs for direct bandgap III-V configurations. The p-TFET SS stays well above 60 mV/dec, due to the low density of states in the conduction band. We therefore propose a source configuration in which a highly doped region is maintained only near the tunnel junction. In the remaining part of the source, the hot carriers in the exponential tail of the Fermi-Dirac distribution are blocked by reducing the doping degeneracy, either with a source section with a lower doping concentration or with a heterostructure. We apply this concept to n-p-i-p configurations consisting of In{sub 0.53}Ga{sub 0.47}As and an InP-InAs heterostructure. 15-band quantum mechanical simulations predict that the configurations with our source design can obtain sub-60 mV/dec SS, with an on-current comparable to the conventional source design.
Authors:
;  [1] ;  [2] ; ; ; ;  [1] ;  [1] ;  [2]
  1. imec, Kapeldreef 75, 3001 Leuven (Belgium)
  2. (Belgium)
Publication Date:
OSTI Identifier:
22395560
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DENSITY OF STATES; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; PERFORMANCE; P-N JUNCTIONS; POTENTIALS; QUANTUM MECHANICS; TUNNEL EFFECT