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Title: Low power ovonic threshold switching characteristics of thin GeTe{sub 6} films using conductive atomic force microscopy

Minimizing the dimensions of the electrode could directly impact the energy-efficient threshold switching and programming characteristics of phase change memory devices. A ∼12–15 nm AFM probe-tip was employed as one of the electrodes for a systematic study of threshold switching of as-deposited amorphous GeTe{sub 6} thin films. This configuration enables low power threshold switching with an extremely low steady state current in the on state of 6–8 nA. Analysis of over 48 different probe locations on the sample reveals a stable Ovonic threshold switching behavior at threshold voltage, V{sub TH} of 2.4 ± 0.5 V and the off state was retained below a holding voltage, V{sub H} of 0.6 ± 0.1 V. All these probe locations exhibit repeatable on-off transitions for more than 175 pulses at each location. Furthermore, by utilizing longer biasing voltages while scanning, a plausible nano-scale control over the phase change behavior from as-deposited amorphous to crystalline phase was studied.
Authors:
;  [1] ; ; ;  [2]
  1. Discipline of Electrical Engineering, Indian Institute of Technology Indore, Madhya Pradesh (India)
  2. Department of Material Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Andhra Pradesh (India)
Publication Date:
OSTI Identifier:
22395557
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; ELECTRIC POTENTIAL; ELECTRODES; GERMANIUM TELLURIDES; MEMORY DEVICES; PHASE CHANGE MATERIALS; PHASE TRANSFORMATIONS; PROBES; SCALE CONTROL; STEADY-STATE CONDITIONS; THIN FILMS