skip to main content

SciTech ConnectSciTech Connect

Title: High thermal stability and low density variation of carbon-doped Ge{sub 2}Sb{sub 2}Te{sub 5} for phase-change memory application

Carbon-doped Ge{sub 2}Sb{sub 2}Te{sub 5} (GSTC) film has been experimentally studied as a thermal stable material for high temperature applications. The 10-yr data retention temperature is remarkably increased through C doping. Furthermore, GSTC films have better interface properties after annealing at 410 °C for 30 min. The density variation of GSTC film is significantly improved, which is very important to device reliability. X-ray photoelectron spectroscopy results reveal that the thermal stability enhancement of GSTC film attributes to the forming of C-Ge, C-Sb, and C-Te bonds. The perfect thermal stability makes GSTC materials a good candidate in the actual production of phase-change memory.
Authors:
 [1] ;  [2] ; ; ; ; ; ; ; ; ;  [1] ;  [3]
  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
  2. (China)
  3. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China)
Publication Date:
OSTI Identifier:
22395555
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ANTIMONY TELLURIDES; CARBON; CARBON COMPOUNDS; CHEMICAL BONDS; DOPED MATERIALS; GERMANIUM COMPOUNDS; INTERFACES; PHASE STABILITY; RELIABILITY; RETENTION; TEMPERATURE DEPENDENCE; VARIATIONS; X-RAY PHOTOELECTRON SPECTROSCOPY