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Title: Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

We report on the structural and optical properties of (In,Ga)AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In,Ga)As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840 nm. These results reveal the potential of (In,Ga)AsN as an efficient active medium monolithically integrated on Si for laser applications.
Authors:
; ; ; ; ; ;  [1] ;  [2] ; ; ;  [3]
  1. UMR FOTON, CNRS, INSA-Rennes, F-35708 Rennes (France)
  2. Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland)
  3. Université de Toulouse, INSA-CNRS-UPS, LPCNO, F-31077 Toulouse (France)
Publication Date:
OSTI Identifier:
22395553
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; COMPARATIVE EVALUATIONS; CRYSTAL GROWTH; GALLIUM NITRIDES; GALLIUM PHOSPHIDES; INDIUM ARSENIDES; MODIFICATIONS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM DOTS; RECOMBINATION; SILICON; SUBSTRATES; TEMPERATURE DEPENDENCE; TIME RESOLUTION