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Title: In situ tuning and probing the ambipolar field effect on multiwall carbon nanotubes

We report a method of fabricating ultra-clean and hysteresis-free multiwall carbon nanotube field-effect transistors (CNFETs) inside the ultra-high vacuum transmission electron microscope equipped with a movable gold tip as a local gate. By tailoring the shell structure of the nanotube and varying the drain-source voltage (V{sub ds}), we can tune the electronic characteristic of a multiwall CNFET in situ. We have also found that the Schottky barriers of a multiwall CNFET are generated within the nanotube, but not at the nanotube/electrode contacts, and the barrier height has been derived. We have subsequently demonstrated the ambipolar characteristics of the CNFET with concurrent high-resolution imaging and local gating.
Authors:
;  [1]
  1. Department of Physics, National Taiwan University, Taipei 10617, Taiwan and Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China)
Publication Date:
OSTI Identifier:
22395552
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CARBON NANOTUBES; ELECTRIC POTENTIAL; ELECTRODES; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; GOLD; HYSTERESIS; PROBES; RESOLUTION; TRANSMISSION ELECTRON MICROSCOPY