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Title: Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene

This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO{sub 2}/Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. Graduate School of Electrical and Electronic Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507 (Japan)
  2. Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna 9203 (Bangladesh)
  3. Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
Publication Date:
OSTI Identifier:
22395547
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIAGRAMS; EPITAXY; GRAPHENE; INTERFACES; LASER RADIATION; PERFORMANCE; POINT DEFECTS; PROBES; RAMAN EFFECT; RAMAN SPECTROSCOPY; SILICON; SILICON OXIDES