Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene

Journal Article · Mon Dec 15 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4904469· OSTI ID:22395547

Makino, T.; Hashimoto, A. ^[1]; Bhuiyan, A. G. ^[2]; Tanaka, S. ^[3]

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1. Graduate School of Electrical and Electronic Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507 (Japan)
2. Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna 9203 (Bangladesh)
3. Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)

This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO{sub 2}/Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.

• OSTI ID: 22395547
• Journal Information: Applied Physics Letters, Vol. 105, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIAGRAMS
EPITAXY
GRAPHENE
INTERFACES
LASER RADIATION
PERFORMANCE
POINT DEFECTS
PROBES
RAMAN EFFECT
RAMAN SPECTROSCOPY
SILICON
SILICON OXIDES