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Title: Molecular beam epitaxial growth and characterization of Bi{sub 2}Se{sub 3}/II-VI semiconductor heterostructures

Surfaces of three-dimensional topological insulators (TIs) have been proposed to host quantum phases at the interfaces with other types of materials, provided that the topological properties of interfacial regions remain unperturbed. Here, we report on the molecular beam epitaxy growth of II-VI semiconductor–TI heterostructures using c-plane sapphire substrates. Our studies demonstrate that Zn{sub 0.49}Cd{sub 0.51}Se and Zn{sub 0.23}Cd{sub 0.25}Mg{sub 0.52}Se layers have improved quality relative to ZnSe. The structures exhibit a large relative upward shift of the TI bulk quantum levels when the TI layers are very thin (∼6nm), consistent with quantum confinement imposed by the wide bandgap II-VI layers. Our transport measurements show that the characteristic topological signatures of the Bi{sub 2}Se{sub 3} layers are preserved.
Authors:
; ;  [1] ;  [2] ; ;  [3] ;  [2] ;  [4] ;  [1]
  1. Department of Physics, The City College of New York, CUNY, New York, New York 10031 (United States)
  2. (United States)
  3. The Graduate Center, CUNY, New York, New York 10016 (United States)
  4. Department of Chemistry, The City College of New York, CUNY, New York, New York 10031 (United States)
Publication Date:
OSTI Identifier:
22395531
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BISMUTH SELENIDES; ENERGY GAP; HETEROJUNCTIONS; INTERFACES; LAYERS; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES; THREE-DIMENSIONAL LATTICES; TITANIUM SULFIDES; TOPOLOGY; ZINC COMPOUNDS; ZINC SELENIDES