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Title: An ultrafast silicon nanoplasmonic ballistic triode

A nanoscale three terminal silicon based nanoplasmonic triode is proposed as a nanometer transistor. The device is suitable for monolithic integration with complementary-metal-oxide-semiconductor technology. Due to the highly spatially inhomogeneous, highly confined nanoplasmonic mode, electrons generated through two-photon absorption in the silicon are ponderomotively accelerated towards the copper anode producing an output current. Application of a negative grid voltage allows for control of the output current. The nanoplasmonic triode is able to achieve output current as high as 628 mA/μm on an ultrafast timescale of 150 fs in a compact footprint of 0.07 μm{sup 2}. Reduction of the plasmonic field strength allows for a CMOS compatible current of 11.7 mA/μm. The results demonstrate the potential for the compact optical control of current useful for applications in high-speed, high current switching, and amplification.
Authors:
;  [1]
  1. Ultrafast Optics and Nanophotonics Laboratory, Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)
Publication Date:
OSTI Identifier:
22395519
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; AMPLIFICATION; ANODES; CONTROL; COPPER; CURIUM OXIDES; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; NANOSTRUCTURES; PHOTONS; PLASMONS; PONDEROMOTIVE FORCE; POTENTIALS; SEMICONDUCTOR MATERIALS; SILICON; TRANSISTORS