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Title: Polarization of Bi{sub 2}Te{sub 3} thin film in a floating-gate capacitor structure

Metal-Oxide-Semiconductor (MOS) capacitors with Bi{sub 2}Te{sub 3} thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi{sub 2}Te{sub 3} thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi{sub 2}Te{sub 3}, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metal–oxide–semiconductor compatibility, the Bi{sub 2}Te{sub 3} embedded MOS structures are very interesting for memory application.
Authors:
; ;  [1] ;  [2] ; ;  [3] ;  [4] ;  [5] ;  [1]
  1. Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030 (United States)
  2. (United States)
  3. Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529 (United States)
  4. Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  5. Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8120 (United States)
Publication Date:
OSTI Identifier:
22395506
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; BISMUTH TELLURIDES; CAPACITANCE; CAPACITORS; ELECTRIC POTENTIAL; ELECTRONS; EV RANGE; FERROELECTRIC MATERIALS; HOLES; HYSTERESIS; LAYERS; METALS; POLARIZATION; POTENTIALS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SURFACES; TEMPERATURE DEPENDENCE; THIN FILMS