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Title: Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

Abstract

We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm{sup 2}/V s to 17.9 cm{sup 2}/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO{sub 2}. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm{sup −3} to 5.83 g cm{sup −3} (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability.

Authors:
; ;  [1]
  1. Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22395505
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CARRIER MOBILITY; CONCENTRATION RATIO; FABRICATION; GALLIUM COMPOUNDS; ILLUMINANCE; INDIUM COMPOUNDS; INTERFACES; OXYGEN; REFLECTIVITY; SILICON OXIDES; STRESSES; THIN FILMS; TRANSISTORS; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES

Citation Formats

Chowdhury, Md Delwar Hossain, Um, Jae Gwang, and Jang, Jin. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C. United States: N. p., 2014. Web. doi:10.1063/1.4903874.
Chowdhury, Md Delwar Hossain, Um, Jae Gwang, & Jang, Jin. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C. United States. https://doi.org/10.1063/1.4903874
Chowdhury, Md Delwar Hossain, Um, Jae Gwang, and Jang, Jin. 2014. "Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C". United States. https://doi.org/10.1063/1.4903874.
@article{osti_22395505,
title = {Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C},
author = {Chowdhury, Md Delwar Hossain and Um, Jae Gwang and Jang, Jin},
abstractNote = {We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm{sup 2}/V s to 17.9 cm{sup 2}/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO{sub 2}. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm{sup −3} to 5.83 g cm{sup −3} (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability.},
doi = {10.1063/1.4903874},
url = {https://www.osti.gov/biblio/22395505}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 105,
place = {United States},
year = {Mon Dec 08 00:00:00 EST 2014},
month = {Mon Dec 08 00:00:00 EST 2014}
}