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Title: Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces

We demonstrate the operation of GaSb p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on (111)A surfaces with Al{sub 2}O{sub 3} gate dielectrics formed by atomic-layer deposition at 150 °C. The p-MOSFETs on (111)A surfaces exhibit higher drain current and lower subthreshold swing than those on (100) surfaces. We find that the interface-state density (D{sub it}) values at the Al{sub 2}O{sub 3}/GaSb MOS interfaces on the (111)A surfaces are lower than those on the (100) surfaces, which can lead to performance enhancement of the GaSb p-MOSFETs on (111)A surfaces. The mobility of the GaSb p-MOSFETs on (111)A surfaces is 80% higher than that on (100) surfaces.
Authors:
; ;  [1] ;  [2] ;  [1] ; ; ;  [3] ;  [2]
  1. The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
  2. (Japan)
  3. JST CREST, K's Gobancho 6F, 7 Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan)
Publication Date:
OSTI Identifier:
22395504
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CARRIER MOBILITY; CRYSTAL STRUCTURE; DENSITY; DIELECTRIC MATERIALS; GALLIUM ANTIMONIDES; INTERFACES; MOSFET; PERFORMANCE; P-TYPE CONDUCTORS; SILICON OXIDES; SURFACES