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Title: Towards a CdS/Cu{sub 2}ZnSnS{sub 4} solar cell efficiency improvement: A theoretical approach

In this work, a device model for Cu{sub 2}ZnSnS{sub 4} (CZTS) solar cell with certified world record efficiency is presented. A study of the most important loss mechanisms and its effect on solar cell performance was carried out. The trap-assisted tunneling and CdS/CZTS interface recombination are introduced as the most important loss mechanisms. Detailed comparison of the simulation results to the measured device parameters shows that our model is able to reproduce the experimental observations (quantum efficiency, efficiency, J{sub sc}, FF, and V{sub oc}) reported under normal operating conditions. Finally, a discussion about a further solar cell efficiency improvement is addressed.
Authors:
; ;  [1]
  1. Escuela Superior de Física y Matemáticas-Instituto Politécnico Nacional (IPN), C.P. 07738 México DF (Mexico)
Publication Date:
OSTI Identifier:
22395502
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM SULFIDES; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; COPPER COMPOUNDS; INTERFACES; PERFORMANCE; QUANTUM EFFICIENCY; RECOMBINATION; SOLAR CELLS; TIN SULFIDES; TRAPS; TUNNEL EFFECT; ZINC COMPOUNDS