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Title: Physical deoxygenation of graphene oxide paper surface and facile in situ synthesis of graphene based ZnO films

In-situ sputtering ZnO films on graphene oxide (GO) paper are used to fabricate graphene based ZnO films. Crystal structure and surface chemical states are investigated. Results indicated that GO paper can be effectively deoxygenated by in-situ sputtering ZnO on them without adding any reducing agent. Based on the principle of radio frequency magnetron sputtering, we propose that during magnetron sputtering process, plasma streams contain large numbers of electrons. These electrons not only collide with argon atoms to produce secondary electrons but also they are accelerated to bombard the substrates (GO paper) resulting in effective deoxygenation of oxygen-containing functional groups. In-situ sputtering ZnO films on GO paper provide an approach to design graphene-semiconductor nanocomposites.
Authors:
; ; ;  [1] ; ;  [2]
  1. Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education, School of Electronic and Information Engineering, International Centers for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049 (China)
  2. State Key Laboratory of Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049 (China)
Publication Date:
OSTI Identifier:
22395494
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARGON; CHEMICAL STATE; CRYSTAL STRUCTURE; ELECTRONS; FILMS; GRAPHENE; MAGNETRONS; NANOCOMPOSITES; OXYGEN; PLASMA; RADIOWAVE RADIATION; REDUCING AGENTS; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; SURFACES; SYNTHESIS; ZINC OXIDES