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Title: Hole mobility in Ge/Si core/shell nanowires: What could be the optimum?

Recent experimental works have shown that Ge/Si core/shell nanowires (NWs) are very attractive for nanoelectronics and for low-temperature quantum devices, thanks to the confinement of holes in the Ge core. Reported hole mobilities of the order of 200 cm{sup 2}/V/s are promising for high-performance field-effect transistors. However, we demonstrate that mobilities more than ten times higher, up to 8000 cm{sup 2}/V/s, could be reached in Ge/Si NWs. Atomistic calculations reveal the considerable influence of the strains induced by the Si shell on the hole transport, whatever the NW orientation. The enhancement of electron-phonon interactions by confinement, which usually degrades the mobility in NWs, is therefore outbalanced by the effect of strains.
Authors:
;  [1] ; ;  [2] ;  [3]
  1. Univ. Grenoble Alpes, INAC-SP2M, L-Sim, Grenoble, France and CEA, INAC-SP2M, L-Sim, Grenoble (France)
  2. Laboratoire de la Matière Condensée et de Nanosciences, Faculté des Sciences, Université de Monastir, Monastir (Tunisia)
  3. IEMN - Department ISEN, UMR CNRS 8520, Lille (France)
Publication Date:
OSTI Identifier:
22395492
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRON-PHONON COUPLING; FIELD EFFECT TRANSISTORS; GERMANIUM; HOLE MOBILITY; HOLES; NANOELECTRONICS; NANOWIRES; ORIENTATION; PERFORMANCE; SILICON; STRAINS