Effect of electron trap states on spin-dependent transport characteristics in CoFe/MgO/n{sup +}-Si junctions investigated by Hanle effect measurements and inelastic electron tunneling spectroscopy
- Toshiba Corporation Corporate R and D Center, Toshiba Corporation, Kawasaki 212-8582 (Japan)
Spin-dependent transport properties in CoFe/MgO/n{sup +}-Si junctions were investigated by Hanle effect measurements and inelastic electron tunneling (IET) spectroscopy. The CoFe/MgO/n{sup +}-Si junctions examined in this study exhibited two different Hanle curves. In the low bias region, broad Hanle signals were mainly observed; in the high bias region, narrow Hanle signals were mainly observed. The d{sup 2}I/dV{sup 2}-V curves (which correspond to IET spectra) contain several peaks originating from phonon modes and other peaks originating from electron trap states. At the bias voltage where electron trap states are observed, Δd{sup 2}I/dV{sup 2} depends on the magnetic field and the full width at half-maximum of the Δd{sup 2}I/dV{sup 2}–H curves corresponds to that of the broad Hanle signals. These results indicate that electron trap states are located in the low energy region and cause a decrease in spin lifetime.
- OSTI ID:
- 22395476
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COBALT
DIAGRAMS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
ELECTRON SPECTROSCOPY
ELECTRONS
INTERMETALLIC COMPOUNDS
IRON
LIFETIME
MAGNESIUM OXIDES
MAGNETIC FIELDS
NITROGEN IONS
PHONONS
SEMICONDUCTOR JUNCTIONS
SPIN
TRAPS
TUNNEL EFFECT