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Title: Effect of electron trap states on spin-dependent transport characteristics in CoFe/MgO/n{sup +}-Si junctions investigated by Hanle effect measurements and inelastic electron tunneling spectroscopy

Spin-dependent transport properties in CoFe/MgO/n{sup +}-Si junctions were investigated by Hanle effect measurements and inelastic electron tunneling (IET) spectroscopy. The CoFe/MgO/n{sup +}-Si junctions examined in this study exhibited two different Hanle curves. In the low bias region, broad Hanle signals were mainly observed; in the high bias region, narrow Hanle signals were mainly observed. The d{sup 2}I/dV{sup 2}-V curves (which correspond to IET spectra) contain several peaks originating from phonon modes and other peaks originating from electron trap states. At the bias voltage where electron trap states are observed, Δd{sup 2}I/dV{sup 2} depends on the magnetic field and the full width at half-maximum of the Δd{sup 2}I/dV{sup 2}–H curves corresponds to that of the broad Hanle signals. These results indicate that electron trap states are located in the low energy region and cause a decrease in spin lifetime.
Authors:
; ; ; ;  [1]
  1. Toshiba Corporation Corporate R and D Center, Toshiba Corporation, Kawasaki 212-8582 (Japan)
Publication Date:
OSTI Identifier:
22395476
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COBALT; DIAGRAMS; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTRON SPECTROSCOPY; ELECTRONS; INTERMETALLIC COMPOUNDS; IRON; LIFETIME; MAGNESIUM OXIDES; MAGNETIC FIELDS; NITROGEN IONS; PHONONS; SEMICONDUCTOR JUNCTIONS; SPIN; TRAPS; TUNNEL EFFECT