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Title: Molybdenum oxide MoO{sub x}: A versatile hole contact for silicon solar cells

This letter examines the application of transparent MoO{sub x} (x < 3) films deposited by thermal evaporation directly onto crystalline silicon (c-Si) to create hole-conducting contacts for silicon solar cells. The carrier-selectivity of MoO{sub x} based contacts on both n- and p-type surfaces is evaluated via simultaneous consideration of the contact recombination parameter J{sub 0c} and the contact resistivity ρ{sub c}. Contacts made to p-type wafers and p{sup +} diffused regions achieve optimum ρ{sub c} values of 1 and 0.2 mΩ·cm{sup 2}, respectively, and both result in a J{sub 0c} of ∼200 fA/cm{sup 2}. These values suggest that significant gains can be made over conventional hole contacts to p-type material. Similar MoO{sub x} contacts made to n-type silicon result in higher J{sub 0c} and ρ{sub c} with optimum values of ∼300 fA/cm{sup 2} and 30 mΩ·cm{sup 2} but still offer significant advantages over conventional approaches in terms of contact passivation, optical properties, and device fabrication.
Authors:
; ;  [1] ;  [2]
  1. Research School of Engineering, The Australian National University, Canberra ACT 0200 (Australia)
  2. Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf (Switzerland)
Publication Date:
OSTI Identifier:
22395473
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; EVAPORATION; FABRICATION; FILMS; GAIN; HOLES; MOLYBDENUM OXIDES; OPTICAL PROPERTIES; PASSIVATION; PHOSPHORUS IONS; RECOMBINATION; SILICON; SILICON SOLAR CELLS; SURFACES