MgSe/ZnSe/CdSe coupled quantum wells grown on InP substrate with intersubband absorption covering 1.55 μm

Journal Article · Mon Dec 08 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903823· OSTI ID:22395472

Chen, Guopeng; Shen, Aidong ^[1]; De Jesus, Joel ^[2]; Tamargo, Maria C. ^[3]

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1. Department of Electrical Engineering, The City College of New York, New York, New York 10031 (United States)
2. Department of Physics, The City College of New York, New York, New York 10031 (United States)
3. Department of Chemistry, The City College of New York, New York, New York 10031 (United States)

The authors report the observation of intersubband (ISB) transitions in the optical communication wavelength region in MgSe/ZnSe/CdSe coupled quantum wells (QWs). The coupled QWs were grown on InP substrates by molecular beam epitaxy. By inserting ZnSe layers to compensate the strain, samples with high structural quality were obtained, as indicated by well resolved satellite peaks in high-resolution x-ray diffraction. The observed ISB transition energies agree well with the calculated values.

• OSTI ID: 22395472
• Journal Information: Applied Physics Letters, Vol. 105, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
CADMIUM SELENIDES
COUPLING
CRYSTAL GROWTH
INDIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
RESOLUTION
STRAINS
SUBSTRATES
X-RAY DIFFRACTION
ZINC SELENIDES