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Title: MgSe/ZnSe/CdSe coupled quantum wells grown on InP substrate with intersubband absorption covering 1.55 μm

The authors report the observation of intersubband (ISB) transitions in the optical communication wavelength region in MgSe/ZnSe/CdSe coupled quantum wells (QWs). The coupled QWs were grown on InP substrates by molecular beam epitaxy. By inserting ZnSe layers to compensate the strain, samples with high structural quality were obtained, as indicated by well resolved satellite peaks in high-resolution x-ray diffraction. The observed ISB transition energies agree well with the calculated values.
Authors:
;  [1] ;  [2] ;  [3]
  1. Department of Electrical Engineering, The City College of New York, New York, New York 10031 (United States)
  2. Department of Physics, The City College of New York, New York, New York 10031 (United States)
  3. Department of Chemistry, The City College of New York, New York, New York 10031 (United States)
Publication Date:
OSTI Identifier:
22395472
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; CADMIUM SELENIDES; COUPLING; CRYSTAL GROWTH; INDIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM WELLS; RESOLUTION; STRAINS; SUBSTRATES; X-RAY DIFFRACTION; ZINC SELENIDES