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Title: Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the doping efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects.
Authors:
;  [1] ;  [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [4]
  1. National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)
  2. (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)
  3. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)
  4. (CREST), Japan Science and Technology Agency (JST), c/o AIST, Tsukuba, Ibaraki 305-8568 (Japan)
Publication Date:
OSTI Identifier:
22395471
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; CRYSTAL GROWTH; DIAMONDS; DOPED MATERIALS; FABRICATION; LAYERS; MICROWAVE RADIATION; N-TYPE CONDUCTORS; PHOSPHORUS; PLASMA; SUBSTRATES