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Title: Carrier thermalization under stimulated emission in In{sub 0.17}Ga{sub 0.83}N epilayer at room temperature

We elucidate a strong room temperature stimulated emission (SE) of In{sub 0.17}Ga{sub 0.83}N epilayer grown by molecular beam epitaxy under the subpicosecond pulse excitation. The SE peak at 428 nm emerges on the higher energy side of the spontaneous emission in photoluminescence spectra when the excitation density exceeds the threshold of ∼3.68 mJ/cm{sup 2}. Nondegenerate transient differential reflectivity measurements show that a multi-stage carrier thermalization from excited states to localized edge states and stimulated emission dominate the decay processes of photogenerated carriers under various excitation densities. Our results indicate that the existence of phonon bottleneck effect could result in a slow thermalization process in the InGaN material even under the condition of stimulated emission.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241 (China)
  2. Department of Physics, Beijing University of Science and Technology, Beijing 100083, People's Republic of China and Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Science, Suzhou 215123 (China)
  3. Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22395470
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; CRYSTAL GROWTH; EXCITATION; EXCITED STATES; GALLIUM NITRIDES; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; REFLECTIVITY; STIMULATED EMISSION; TEMPERATURE RANGE 0273-0400 K; THERMALIZATION; TRANSIENTS