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Title: Electronic and thermal effects in the insulator-metal phase transition in VO{sub 2} nano-gap junctions

By controlling the thermal transport of VO{sub 2} nano-gap junctions using device geometry, contact material, and applied voltage waveforms, the electronically induced insulator-metal phase transition is investigated in the adiabatic heating and transient carrier injection regimes. With a gradual ramping of an applied voltage on a microsecond time scale, the transition electric field threshold can be directly reduced by the Joule heating. With an abrupt applied voltage, the transition threshold is initiated by carriers injected within the first tens of nanoseconds, but the complete insulator-metal phase transition is limited by thermal redistribution times to hundreds of nanoseconds.
Authors:
; ; ;  [1] ; ;  [2]
  1. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4 (Canada)
  2. Defence Research and Development Canada - Valcartier, 2459 Pie-XI Blvd. North, Quebec, Quebec G3J 1X5 (Canada)
Publication Date:
OSTI Identifier:
22395462
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; ELECTRIC CONTACTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; JOULE HEATING; METALS; PHASE TRANSFORMATIONS; SEMICONDUCTOR JUNCTIONS; TEMPERATURE DEPENDENCE; THERMAL CONDUCTION; TRANSIENTS; VANADIUM OXIDES; WAVE FORMS