skip to main content

SciTech ConnectSciTech Connect

Title: Twin superlattice-induced large surface recombination velocity in GaAs nanostructures

Semiconductor nanowires (NWs) often contain a high density of twin defects that form a twin superlattice, but its effects on electronic properties are largely unknown. Here, nonadiabatic quantum molecular dynamics simulation shows unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective charge-recombination centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying surface-recombination processes.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States)
  2. (Japan)
Publication Date:
OSTI Identifier:
22395456
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL STRUCTURE; DENSITY; EFFECTIVE CHARGE; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; MOLECULAR DYNAMICS METHOD; NANOWIRES; RECOMBINATION; SEMICONDUCTOR MATERIALS; SUPERLATTICES; SURFACES; VELOCITY