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Title: Electrically injected near-infrared light emission from single InN nanowire p-i-n diode

We report on the achievement of electroluminescence emission of single InN p-i-n nanowire devices. InN p-i-n nanowire structures were grown directly on Si substrate by plasma-assisted molecular beam epitaxy and subsequently transferred to foreign substrate for the fabrication of single nanowire light emitting diodes. Electroluminescence emission with a peak energy of 0.71 eV (1.75 μm) was observed at 77 K. The measurement of near-bandgap electroluminescence provides unambiguous evidence for the achievement of p-type conduction of InN.
Authors:
; ; ;  [1]
  1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)
Publication Date:
OSTI Identifier:
22395454
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTROLUMINESCENCE; EMISSION SPECTRA; EV RANGE; FABRICATION; INDIUM NITRIDES; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; P-TYPE CONDUCTORS; SEMICONDUCTOR JUNCTIONS; SILICON; SUBSTRATES; TEMPERATURE DEPENDENCE; VISIBLE RADIATION