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Title: Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared

Photonic crystal point-defect cavities were fabricated in a GaN free-standing photonic crystal slab. The cavities are based on the popular L3 design, which was optimized using an automated process based on a genetic algorithm, in order to maximize the quality factor. Optical characterization of several individual cavity replicas resulted in an average unloaded quality factor Q = 16 900 at the resonant wavelength λ∼1.3 μm, with a maximal measured Q value of 22 500. The statistics of both the quality factor and the resonant wavelength are well explained by first-principles simulations including fabrication disorder and background optical absorption.
Authors:
; ; ;  [1] ; ;  [2] ; ;  [3]
  1. Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)
  2. Laboratory of Theoretical Physics of Nanosystems, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)
  3. Dipartimento di Fisica, Università di Pavia, via Bassi 6, 27100 Pavia (Italy)
Publication Date:
OSTI Identifier:
22395449
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ALGORITHMS; COMPUTERIZED SIMULATION; CRYSTALS; FABRICATION; GALLIUM NITRIDES; NEAR INFRARED RADIATION; POINT DEFECTS; QUALITY FACTOR; Q-VALUE; SLABS; WAVELENGTHS