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Title: High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes

We report on the light extraction efficiency of III-Nitride violet light-emitting diodes with a volumetric flip-chip architecture. We introduce an accurate optical model to account for light extraction. We fabricate a series of devices with varying optical configurations and fit their measured performance with our model. We show the importance of second-order optical effects like photon recycling and residual surface roughness to account for data. We conclude that our devices reach an extraction efficiency of 89%.
Authors:
; ; ; ; ; ; ;  [1]
  1. Soraa Inc., 6500 Kaiser Dr., Fremont, California 94555 (United States)
Publication Date:
OSTI Identifier:
22395445
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; EFFICIENCY; GALLIUM NITRIDES; LIGHT EMITTING DIODES; OPTICAL MODELS; PERFORMANCE; PHOTONS; ROUGHNESS; SURFACES; VISIBLE RADIATION; VOLUMETRIC ANALYSIS