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Title: High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure

900 nm longitudinal photonic band crystal (PBC) laser diodes with optimized epitaxial structure are fabricated. With a same calculated fundamental-mode divergence, stronger mode discrimination is achieved by a quasi-periodic index modulation in the PBC waveguide than a periodic one. Experiments show that the introduction of over 5.5 μm-thick PBC waveguide contributes to only 10% increment of the internal loss for the laser diodes. For broad area PBC lasers, output powers of 5.75 W under continuous wave test and over 10 W under quasi-continuous wave test are reported. The vertical divergence angles are 10.5° at full width at half maximum and 21.3° with 95% power content, in conformity with the simulated angles. Such device shows a prospect for high-power narrow-vertical-divergence laser emission from single diode laser and laser bar.
Authors:
; ; ; ;  [1] ;  [2] ; ;  [3]
  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083 (China)
  2. (China)
  3. Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22395444
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTALS; ELECTRONIC STRUCTURE; EPITAXY; INDEXES; LASER RADIATION; MODULATION; PERIODICITY; PHOTONS; P-N JUNCTIONS; SEMICONDUCTOR LASERS; WAVEGUIDES