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Title: Terahertz surface emission from Cu{sub 2}ZnSnSe{sub 4} thin film photovoltaic material excited by femtosecond laser pulses

We observed efficient terahertz (THz) emission from sol-gel grown Cu{sub 2}ZnSnSe{sub 4} (CZTSe) thin films using THz time domain spectroscopy technique. The THz emission bandwidth exceeds 2 THz with a dynamic range of 20 dB in the amplitude spectrum. The THz emission amplitude from CZTSe is found to be independent of external magnetic fields. Comparing the polarity of THz emission waveforms of CZTSe and GaAs, we suggest that the acceleration of photo-carriers in the surface accumulation layer of CZTSe is the dominant mechanism of radiation emission. Optical excitation fluence dependence measurements show that the saturation fluence of the CZTSe thin film reaches 1.48 μJ/cm{sup 2}.
Authors:
; ; ;  [1] ; ; ; ;  [2] ;  [2] ;  [3] ;  [1] ;  [4]
  1. Department of Physics, Shanghai Normal University, Shanghai 200234 (China)
  2. Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)
  3. (Philippines)
  4. (Japan)
Publication Date:
OSTI Identifier:
22395441
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; COPPER COMPOUNDS; EMISSION SPECTRA; EMISSION SPECTROSCOPY; EXCITATION; GALLIUM ARSENIDES; LAYERS; MAGNETIC FIELDS; PHOTOVOLTAIC EFFECT; SOL-GEL PROCESS; SURFACES; THIN FILMS; THZ RANGE; TIN SELENIDES; WAVE FORMS; ZINC COMPOUNDS