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Title: Note: A silicon-on-insulator microelectromechanical systems probe scanner for on-chip atomic force microscopy

A new microelectromechanical systems-based 2-degree-of-freedom (DoF) scanner with an integrated cantilever for on-chip atomic force microscopy (AFM) is presented. The silicon cantilever features a layer of piezoelectric material to facilitate its use for tapping mode AFM and enable simultaneous deflection sensing. Electrostatic actuators and electrothermal sensors are used to accurately position the cantilever within the x-y plane. Experimental testing shows that the cantilever is able to be scanned over a 10 μm × 10 μm window and that the cantilever achieves a peak-to-peak deflection greater than 400 nm when excited at its resonance frequency of approximately 62 kHz.
Authors:
; ;  [1]
  1. School of Electrical Engineering and Computer Science, University of Newcastle, Callaghan, NSW 2308 (Australia)
Publication Date:
OSTI Identifier:
22392484
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 86; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTUATORS; APPROXIMATIONS; ATOMIC FORCE MICROSCOPY; DEGREES OF FREEDOM; KHZ RANGE 01-100; LAYERS; MEMS; PEAKS; PIEZOELECTRICITY; PROBES; RESONANCE; SENSORS; SILICON; TESTING