skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber

Abstract

A method is described for directly measuring the temperature of a substrate in a molecular-beam epitaxy (MBE) growth system. The approach relies on the establishment of the temperature dependence of Raman-active phonons of the substrate material using independently known calibration points across the range of interest. An unknown temperature in this range is then determined based on the Raman peak position with the substrate in situ the MBE chamber. The apparatus relies on conventional optics and Raman components. Shifting and broadening of the Raman spectrum are described based on the effects of thermal expansion and anharmonic decay. The choice of reference temperature is discussed. The method is qualified by examining the substrate temperature dependence, relative to that of a standard thermocouple, during a commonly used ramp procedure. Both temperature difference and time lag are obtained.

Authors:
; ; ;
Publication Date:
OSTI Identifier:
22392330
Resource Type:
Journal Article
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 86; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0034-6748
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CALIBRATION; GRAIN GROWTH; MOLECULAR BEAM EPITAXY; OPTICS; PHONONS; RAMAN SPECTRA; SUBSTRATES; TEMPERATURE DEPENDENCE; THERMAL EXPANSION; THERMOCOUPLES

Citation Formats

Hutchins, T., Nazari, M., Eridisoorya, M., Myers, T. M., and Holtz, M., E-mail: Mark.Holtz@txstate.edu. Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber. United States: N. p., 2015. Web. doi:10.1063/1.4905858.
Hutchins, T., Nazari, M., Eridisoorya, M., Myers, T. M., & Holtz, M., E-mail: Mark.Holtz@txstate.edu. Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber. United States. https://doi.org/10.1063/1.4905858
Hutchins, T., Nazari, M., Eridisoorya, M., Myers, T. M., and Holtz, M., E-mail: Mark.Holtz@txstate.edu. 2015. "Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber". United States. https://doi.org/10.1063/1.4905858.
@article{osti_22392330,
title = {Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber},
author = {Hutchins, T. and Nazari, M. and Eridisoorya, M. and Myers, T. M. and Holtz, M., E-mail: Mark.Holtz@txstate.edu},
abstractNote = {A method is described for directly measuring the temperature of a substrate in a molecular-beam epitaxy (MBE) growth system. The approach relies on the establishment of the temperature dependence of Raman-active phonons of the substrate material using independently known calibration points across the range of interest. An unknown temperature in this range is then determined based on the Raman peak position with the substrate in situ the MBE chamber. The apparatus relies on conventional optics and Raman components. Shifting and broadening of the Raman spectrum are described based on the effects of thermal expansion and anharmonic decay. The choice of reference temperature is discussed. The method is qualified by examining the substrate temperature dependence, relative to that of a standard thermocouple, during a commonly used ramp procedure. Both temperature difference and time lag are obtained.},
doi = {10.1063/1.4905858},
url = {https://www.osti.gov/biblio/22392330}, journal = {Review of Scientific Instruments},
issn = {0034-6748},
number = 1,
volume = 86,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}