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Title: Selective area epitaxy of monolithic white-light InGaN/GaN quantum well microstripes with dual color emission

Monolithic color synthesis is demonstrated using InGaN/GaN multiple quantum wells (QWs) grown on GaN microstripes formed by selective area epitaxy on SiO{sub 2} mask patterns. The striped microfacet structure is composed of (0001) and (11-22) planes, attributed to favorable surface polarity and surface energy. InGaN/GaN QWs on different microfacets contain spatially inhomogeneous compositions owing to the diffusion of adatoms among the facets. This unique property allows the microfacet QWs to emit blue light from the (11-22) plane and yellow light from the top (0001) plane, the mixing of which leads to the perception of white light emission.
Authors:
; ; ; ; ; ; ; ; ; ; ;  [1]
  1. School of Science, Jiangnan University, Wuxi 214122 (China)
Publication Date:
OSTI Identifier:
22392205
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 5; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING; COLOR; DIFFUSION; EMISSION; EPITAXY; GALLIUM NITRIDES; QUANTUM WELLS; SILICON OXIDES; SURFACE ENERGY; SURFACES