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Title: Ar{sup +}-irradiation-induced damage in hydride vapor-phase epitaxy GaN films

The authors have investigated the electrical characteristics of hydride vapor-phase epitaxy GaN films exposed to Ar{sup +} irradiation, employing Schottky barrier diodes. The Ar{sup +} irradiation tends to largely increase the effective carrier concentration in the near surface region of GaN up to ∼25 nm, due to the generation of donor-type N vacancy defects, compared to the original value before the irradiation. More interestingly, acceptor-type deep-level defects are found to be formed at ∼2.1, ∼2.9, and ∼3.2 eV below the conduction band in the subsequently deeper region, in which Ga vacancies introduced by the Ar{sup +} irradiation are considered to be in-diffused and immediately combined with hydrogen. These N vacancies and hydrogenated Ga vacancies formed are dominantly responsible for changing the depth profiles of the effective carrier concentration via the carrier generation, the carrier trapping, and/or carrier compensation.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. Departments of Electrical and Electronics Engineering, Chubu University, Kasugai, Aichi 487-8501 (Japan)
  2. Institute of Socio-Techno Science Technology, The University of Tokushima, Tokushima 770-8506 (Japan)
  3. Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan)
Publication Date:
OSTI Identifier:
22392203
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 4; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARGON IONS; CARRIERS; FILMS; GALLIUM NITRIDES; HYDRIDES; IRRADIATION; VACANCIES; VAPOR PHASE EPITAXY