Ar{sup +}-irradiation-induced damage in hydride vapor-phase epitaxy GaN films
Abstract
The authors have investigated the electrical characteristics of hydride vapor-phase epitaxy GaN films exposed to Ar{sup +} irradiation, employing Schottky barrier diodes. The Ar{sup +} irradiation tends to largely increase the effective carrier concentration in the near surface region of GaN up to ∼25 nm, due to the generation of donor-type N vacancy defects, compared to the original value before the irradiation. More interestingly, acceptor-type deep-level defects are found to be formed at ∼2.1, ∼2.9, and ∼3.2 eV below the conduction band in the subsequently deeper region, in which Ga vacancies introduced by the Ar{sup +} irradiation are considered to be in-diffused and immediately combined with hydrogen. These N vacancies and hydrogenated Ga vacancies formed are dominantly responsible for changing the depth profiles of the effective carrier concentration via the carrier generation, the carrier trapping, and/or carrier compensation.
- Authors:
-
- Departments of Electrical and Electronics Engineering, Chubu University, Kasugai, Aichi 487-8501 (Japan)
- Institute of Socio-Techno Science Technology, The University of Tokushima, Tokushima 770-8506 (Japan)
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan)
- Publication Date:
- OSTI Identifier:
- 22392203
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Additional Journal Information:
- Journal Volume: 33; Journal Issue: 4; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARGON IONS; CARRIERS; FILMS; GALLIUM NITRIDES; HYDRIDES; IRRADIATION; VACANCIES; VAPOR PHASE EPITAXY
Citation Formats
Nakano, Yoshitaka, Ogawa, Daisuke, Nakamura, Keiji, Kawakami, Retsuo, and Niibe, Masahito. Ar{sup +}-irradiation-induced damage in hydride vapor-phase epitaxy GaN films. United States: N. p., 2015.
Web. doi:10.1116/1.4922593.
Nakano, Yoshitaka, Ogawa, Daisuke, Nakamura, Keiji, Kawakami, Retsuo, & Niibe, Masahito. Ar{sup +}-irradiation-induced damage in hydride vapor-phase epitaxy GaN films. United States. https://doi.org/10.1116/1.4922593
Nakano, Yoshitaka, Ogawa, Daisuke, Nakamura, Keiji, Kawakami, Retsuo, and Niibe, Masahito. 2015.
"Ar{sup +}-irradiation-induced damage in hydride vapor-phase epitaxy GaN films". United States. https://doi.org/10.1116/1.4922593.
@article{osti_22392203,
title = {Ar{sup +}-irradiation-induced damage in hydride vapor-phase epitaxy GaN films},
author = {Nakano, Yoshitaka and Ogawa, Daisuke and Nakamura, Keiji and Kawakami, Retsuo and Niibe, Masahito},
abstractNote = {The authors have investigated the electrical characteristics of hydride vapor-phase epitaxy GaN films exposed to Ar{sup +} irradiation, employing Schottky barrier diodes. The Ar{sup +} irradiation tends to largely increase the effective carrier concentration in the near surface region of GaN up to ∼25 nm, due to the generation of donor-type N vacancy defects, compared to the original value before the irradiation. More interestingly, acceptor-type deep-level defects are found to be formed at ∼2.1, ∼2.9, and ∼3.2 eV below the conduction band in the subsequently deeper region, in which Ga vacancies introduced by the Ar{sup +} irradiation are considered to be in-diffused and immediately combined with hydrogen. These N vacancies and hydrogenated Ga vacancies formed are dominantly responsible for changing the depth profiles of the effective carrier concentration via the carrier generation, the carrier trapping, and/or carrier compensation.},
doi = {10.1116/1.4922593},
url = {https://www.osti.gov/biblio/22392203},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 4,
volume = 33,
place = {United States},
year = {Wed Jul 15 00:00:00 EDT 2015},
month = {Wed Jul 15 00:00:00 EDT 2015}
}