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Title: Nucleation of diindenoperylene and pentacene at thermal and hyperthermal incident kinetic energies

The authors have examined the nucleation of diindenoperylene (DIP) on SiO{sub 2} employing primarily atomic force microscopy and focusing on the effect of incident kinetic energy employing both thermal and supersonic sources. For all incident kinetic energies examined (E{sub i} = 0.09–11.3 eV), the nucleation of DIP is homogeneous and the dependence of the maximum island density on the growth rate is described by a power law. A critical nucleus of approximately two molecules is implicated by our data. A re-examination of the nucleation of pentacene on SiO{sub 2} gives the same major result that the maximum island density is determined by the growth rate, and it is independent of the incident kinetic energy. These observations are readily understood by factoring in the size of the critical nucleus in each case, and the island density, which indicates that diffusive transport of molecules to the growing islands dominate the dynamics of growth in the submonolayer regime.
Authors:
; ; ;  [1] ;  [2]
  1. School of Chemical and Biomolecular Engineering, Cornell University, Ithaca, New York 14853 (United States)
  2. Cornell High Energy Synchrotron Source, Cornell University, Ithaca, New York 14853 (United States)
Publication Date:
OSTI Identifier:
22392183
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 3; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACCIDENTS; ATOMIC FORCE MICROSCOPY; DENSITY; EV RANGE; KINETIC ENERGY; MOLECULES; NUCLEATION; PENTACENE; SILICA; SILICON OXIDES