Recovery of x-ray absorption spectral profile in etched TiO{sub 2} thin films
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigoori, Hyogo 678-1205 (Japan)
- Institute of Socio-Techno Science Technology, The University of Tokushima, Tokushima, Tokushima 770-8506 (Japan)
- Institute of Science and Technology Research, Chubu University, Kasugai, Aichi 487-8501 (Japan)
Near edge x-ray absorption fine structure (NEXAFS) spectra of plasma-etched TiO{sub 2} thin films were observed using the total fluorescence yield method involving visible emission. The disrupted spectrum recovered its as-grown (nonetched) profile, upon soft x-ray (SX) irradiation. This recovery was investigated by ultraviolet (UV) irradiation, spatial distribution measurements, exposing recovered samples to air, and NEXAFS measurements of ultrafine TiO{sub 2} particles. The spectral profile recovered upon UV irradiation, and at sample positions outside of the SX irradiation site. The recovered spectral profiles were disrupted again, upon exposure to air. Nonetched ultrafine TiO{sub 2} particles also exhibited a disrupted spectral profile, which was recovered upon SX irradiation. The spectral recovery is explained by a model involving electrons trapped in oxygen vacancies generated by etching.
- OSTI ID:
- 22392174
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 3; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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