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Title: Sintered Cr/Pt and Ni/Au ohmic contacts to B{sub 12}P{sub 2}

Icosahedral boron phosphide (B{sub 12}P{sub 2}) is a wide-bandgap semiconductor possessing interesting properties such as high hardness, chemical inertness, and the reported ability to self-heal from irradiation by high energy electrons. Here, the authors developed Cr/Pt and Ni/Au ohmic contacts to epitaxially grown B{sub 12}P{sub 2} for materials characterization and electronic device development. Cr/Pt contacts became ohmic after annealing at 700 °C for 30 s with a specific contact resistance of 2 × 10{sup −4} Ω cm{sup 2}, as measured by the linear transfer length method. Ni/Au contacts were ohmic prior to any annealing, and their minimum specific contact resistance was ∼l–4 × 10{sup −4} Ω cm{sup 2} after annealing over the temperature range of 500–800 °C. Rutherford backscattering spectrometry revealed a strong reaction and intermixing between Cr/Pt and B{sub 12}P{sub 2} at 700 °C and a reaction layer between Ni and B{sub 12}P{sub 2} thinner than ∼25 nm at 500 °C.
Authors:
 [1] ; ; ; ; ;  [2] ;  [3]
  1. Lawrence Livermore National Laboratory, Livermore, California 94550 and Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506 (United States)
  2. Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
  3. Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506 (United States)
Publication Date:
OSTI Identifier:
22392167
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 3; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ELECTRONIC EQUIPMENT; EPITAXY; HARDNESS; IRRADIATION; LAYERS; LENGTH; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS