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Title: Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

Epitaxial NbO{sub 2} thin films were synthesized on Al{sub 2}O{sub 3} (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO{sub 2}. Through XPS, it was found that there was a ∼1.3 nm thick Nb{sub 2}O{sub 5} layer on the surface and the bulk of the thin film was NbO{sub 2}. The epitaxial relationship between the NbO{sub 2} film and the substrate was determined. Electrical transport measurement was measured up to 400 K, and the conduction mechanism was discussed.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
  2. Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
  3. Department of Materials Science and Engineering and Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States)
Publication Date:
OSTI Identifier:
22392160
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 2; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ALUMINIUM OXIDES; DEPOSITION; EPITAXY; ION BEAMS; LAYERS; NIOBATES; NIOBIUM OXIDES; RAMAN SPECTRA; SUBSTRATES; SURFACES; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY