Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

Journal Article · Sun Mar 15 00:00:00 EDT 2015 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4906143· OSTI ID:22392160

Wang, Yuhan; Kittiwatanakul, Salinporn; Lu, Jiwei ^[1]; Comes, Ryan B. ^[2]; Wolf, Stuart A. ^[3]

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1. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
2. Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
3. Department of Materials Science and Engineering and Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States)

Epitaxial NbO{sub 2} thin films were synthesized on Al{sub 2}O{sub 3} (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO{sub 2}. Through XPS, it was found that there was a ∼1.3 nm thick Nb{sub 2}O{sub 5} layer on the surface and the bulk of the thin film was NbO{sub 2}. The epitaxial relationship between the NbO{sub 2} film and the substrate was determined. Electrical transport measurement was measured up to 400 K, and the conduction mechanism was discussed.

• OSTI ID: 22392160
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 2; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM OXIDES
DEPOSITION
EPITAXY
ION BEAMS
LAYERS
NIOBATES
NIOBIUM OXIDES
RAMAN SPECTRA
SUBSTRATES
SURFACES
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY