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Title: Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO{sub 2}

Abstract

The authors describe how changes in shutter state (open/closed) affect sputter plasma conditions and stability of the deposition rate of Ti and TiO{sub 2} films. The films were grown by high power impulse magnetron sputtering in pure Ar and in Ar/O{sub 2} mixture from a metallic Ti target. The shutter state was found to have an effect on the pulse waveform for both pure Ar and reactive sputtering of Ti also affecting stability of TiO{sub 2} deposition rate. When the shutter opened, the shape of pulse current changed from rectangular to peak-plateau and pulse energy decreased. The authors attribute it to the change in plasma impedance and gas rarefaction originating in geometry change in front of the magnetron. TiO{sub 2} deposition rate was initially found to be high, 1.45 Å/s, and then dropped by ∼40% during the first 5 min, while for Ti the change was less obvious. Instability of deposition rate poses significant challenge for growing multilayer heterostructures. In this work, the authors suggest a way to overcome this by monitoring the integrated average energy involved in the deposition process. It is possible to calibrate and control the film thickness by monitoring the integrated pulse energy and end growthmore » when desired integrated pulse energy level has been reached.« less

Authors:
; ; ; ;  [1]
  1. Physics Division, Science Institute—University of Iceland, Reykjavik 107 (Iceland)
Publication Date:
OSTI Identifier:
22392159
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 33; Journal Issue: 2; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; CONTROL; DEPOSITION; FILMS; IMPEDANCE; LAYERS; MAGNETRONS; MONITORING; PLASMA; SPUTTERING; TITANIUM OXIDES; WAVE FORMS

Citation Formats

Kossoy, Anna, Magnusson, Rögnvaldur L., Tryggvason, Tryggvi K., Leosson, Kristjan, and Olafsson, Sveinn. Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO{sub 2}. United States: N. p., 2015. Web. doi:10.1116/1.4905737.
Kossoy, Anna, Magnusson, Rögnvaldur L., Tryggvason, Tryggvi K., Leosson, Kristjan, & Olafsson, Sveinn. Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO{sub 2}. United States. https://doi.org/10.1116/1.4905737
Kossoy, Anna, Magnusson, Rögnvaldur L., Tryggvason, Tryggvi K., Leosson, Kristjan, and Olafsson, Sveinn. 2015. "Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO{sub 2}". United States. https://doi.org/10.1116/1.4905737.
@article{osti_22392159,
title = {Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO{sub 2}},
author = {Kossoy, Anna and Magnusson, Rögnvaldur L. and Tryggvason, Tryggvi K. and Leosson, Kristjan and Olafsson, Sveinn},
abstractNote = {The authors describe how changes in shutter state (open/closed) affect sputter plasma conditions and stability of the deposition rate of Ti and TiO{sub 2} films. The films were grown by high power impulse magnetron sputtering in pure Ar and in Ar/O{sub 2} mixture from a metallic Ti target. The shutter state was found to have an effect on the pulse waveform for both pure Ar and reactive sputtering of Ti also affecting stability of TiO{sub 2} deposition rate. When the shutter opened, the shape of pulse current changed from rectangular to peak-plateau and pulse energy decreased. The authors attribute it to the change in plasma impedance and gas rarefaction originating in geometry change in front of the magnetron. TiO{sub 2} deposition rate was initially found to be high, 1.45 Å/s, and then dropped by ∼40% during the first 5 min, while for Ti the change was less obvious. Instability of deposition rate poses significant challenge for growing multilayer heterostructures. In this work, the authors suggest a way to overcome this by monitoring the integrated average energy involved in the deposition process. It is possible to calibrate and control the film thickness by monitoring the integrated pulse energy and end growth when desired integrated pulse energy level has been reached.},
doi = {10.1116/1.4905737},
url = {https://www.osti.gov/biblio/22392159}, journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 2,
volume = 33,
place = {United States},
year = {Sun Mar 15 00:00:00 EDT 2015},
month = {Sun Mar 15 00:00:00 EDT 2015}
}