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Title: Real-time x-ray studies of indium island growth kinetics

The authors have investigated the early stages of indium island formation and growth by vapor phase deposition on room temperature sapphire using real-time grazing incidence small angle x-ray scattering (GISAXS), followed by ex-situ atomic force microscopy and scanning electron microscopy. The results are consistent with the formation and coalescence of hemispherical islands, as described by Family and Meakin. Monte Carlo simulations of systems of coalescing islands were used to supplement and quantify the results of GISAXS, and a good agreement is seen between the data and the simulations.
Authors:
 [1] ;  [2] ;  [3]
  1. Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States)
  2. Division of Material Science and Engineering, Boston University, 15 Saint Mary Street, Brookline, Massachusetts 02446 (United States)
  3. Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 and Division of Material Science and Engineering, Boston University, 15 Saint Mary Street, Brookline, Massachusetts 02446 (United States)
Publication Date:
OSTI Identifier:
22392149
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 2; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING; ATOMIC FORCE MICROSCOPY; COALESCENCE; COMPUTERIZED SIMULATION; DEPOSITION; MONTE CARLO METHOD; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SMALL ANGLE SCATTERING; X RADIATION; X-RAY DIFFRACTION