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Title: Formation of PtSi Schottky barrier MOSFETs using plasma etching

PtSi Schottky barrier (SB) MOSFETs were fabricated and their device performance was characterized. PtSi was selected instead of NiSi to form the p-type SB junction since such a configuration would be easy to fabricate through SF{sub 6} based plasma etching. The addition of He-O{sub 2} in SF{sub 6} decreases the etching rate of PtSi while the etching rate of Pt remains unchanged. The retardation in the etching rate of PtSi in He-O{sub 2}/SF{sub 6} is attributed to the formation of a metal oxide on the etched PtSi surface, as evidenced by the x-ray photoelectron spectroscopy results. Optical emission spectroscopy was conducted to establish the endpoint where the wavelength from the feed gas was traced instead of tracing the etching by-products since the by-products have little association with the plasma reaction. The I{sub DS}–V{sub DS} curves at various V{sub G}–V{sub TH} indicate that plasma etching resulted in the successful removal of the Pt on the sidewall region, with negligible damage to the S/D area.
Authors:
;  [1] ;  [2]
  1. Department of Materials Engineering, Korea Aerospace University, Gyeonggi-do 412-791 (Korea, Republic of)
  2. Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 440-746 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22392140
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 2; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING; BY-PRODUCTS; ELECTRIC CONTACTS; EMISSION SPECTROSCOPY; ETCHING; MOSFET; NICKEL SILICIDES; PERFORMANCE; PLASMA; SEMICONDUCTOR JUNCTIONS; SULFUR FLUORIDES; SURFACES; WAVELENGTHS; X-RAY PHOTOELECTRON SPECTROSCOPY