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Title: Plasmon-enhanced photocurrent of Ge-doped InGaO thin film transistors using silver nanoparticles

Germanium-doped indium-gallium oxide (GIGO) thin film transistors (TFTs) decorated with silver (Ag) nanoparticles (NPs) were prepared to study the plasmon effect. GIGO films of various thicknesses were deposited on SiO{sub 2}/Si substrates, and Ag NPs (∼25 nm in diameter) were formed using a thermal evaporator and a postannealing process. The Ag NPs effectively absorbed light in the wavelength range of 500 and 600 nm, which corresponds to the plasmonic effect. Due to the plasmon resonance of Ag NPs, a significantly enhanced photocurrent was observed on the devices. The current increased by 348% with exposure to light when the Ag NPs were formed at the interface between the 10-nm-thick GIGO film and SiO{sub 2} substrate. The increased photocurrent revealed the presence of strong coupling between the localized plasmon and electrical carrier of the devices. The results show that the photocurrent of GIGO TFTs can be greatly enhanced when the plasmonic Ag NPs are located in the channel region of the devices.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin, Gyeonggi-do 446-701 (Korea, Republic of)
  2. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seoul 133-719 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22392132
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 2; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; DOPED MATERIALS; GALLIUM OXIDES; GERMANIUM; INDIUM; INTERFACES; NANOPARTICLES; SILICON OXIDES; SILVER; SUBSTRATES; THICKNESS; THIN FILMS